Merck
CN

481769

Sigma-Aldrich

氮化镓

99.9% trace metals basis

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别名:
氮化镓, 氮化镓(GaN)
线性分子式:
GaN
CAS号:
分子量:
83.73
EC 号:
MDL编号:
PubChem化学物质编号:
NACRES:
NA.23

质量水平

检测方案

99.9% trace metals basis

形式

powder

mp

800 °C (lit.)

SMILES字符串

N#[Ga]

InChI

1S/Ga.N

InChI key

JMASRVWKEDWRBT-UHFFFAOYSA-N

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相关类别

应用

氮化镓(GaN)是一种宽带隙半导体材料,可用于各种电子器件的开发,如发光二极管(LED)和场效应晶体管(FET)。它还可用作基于自旋电子学应用的过渡金属掺杂剂。

象形图

Exclamation mark

警示用语:

Warning

危险声明

危险分类

Skin Sens. 1

储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Faceshields, Gloves, type N95 (US)


分析证书(COA)

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High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
Kim H, et al.
Nano Letters, 4(6), 1059-1062 (2004)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Gallium nitride processing for electronics, sensors and spintronics, 2(2), 101-104 (2006)
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)

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