description
single side polished
assay
≥99.9% trace metals basis
form
(single crystal substrate)
dielectric constant
9.8
reaction suitability
reagent type: catalyst
core: magnesium
L × W × thickness
10 mm × 10 mm × 0.5 mm
impurities
<10 ppm C, <10 ppm Cr, <10 ppm Si, <15 ppm Al, <40 ppm Ca, <5 ppm B, <50 ppm Fe
transmittance
200-400 nm, >90%, 500-1000 nm, >98%
mp
2852 °C (lit.)
semiconductor properties
<111>
SMILES string
O=[Mg]
InChI
1S/Mg.O
InChI key
CPLXHLVBOLITMK-UHFFFAOYSA-N
General description
热膨胀:12.8×10-6/°C
Features and Benefits
氧化镁是用于制备铁磁、光电和高 Tc 超导材料的薄膜的优质单晶基底。
Physical form
立方晶系 (a = 4.216Å)
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存储类别
13 - Non Combustible Solids
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)