Quality Segment
assay
iodine (I) basis (titration), ≥99.9% trace metals basis (ICP-Mass/ICP-OES), ≥99.9% trace metals basis
form
powder
impurities
≤1000 ppmtrace (metals basis)
color
colorless to white
mp
123-127 °C (lit.), 123-127 °C
application(s)
semiconductor
SMILES string
CO[Sb](OC)OC
InChI
1S/3CH3O.Sb/c3*1-2;/h3*1H3;/q3*-1;+3
InChI key
KEUYHGXCOWNTEJ-UHFFFAOYSA-N
General description
Antimony(III) methoxide (trimethoxyantimony, trimethoxystibine) is a metal alkoxide supplied as a colorless to white crystalline powder. As a strong Lewis acidic species, it is useful in coordination chemistry, organic synthesis, and materials research, where it can act as a precursor to antimony-containing compounds and functional inorganic materials. With a purity of ≥99.9% on a trace metals basis, this product offers a highly reliable, low‑contamination source of antimony for advanced research and precision applications.
Application
Antimony(III) methoxide (Sb(OMe)3) is a valuable high‑volatility precursor for the controlled deposition of antimony oxide thin films in ALD and CVD processes. Its ability to form stable complexes and well‑defined SbOₓ layers makes it attractive for microelectronics, optical coatings, and flame‑retardant systems.
At a purity level of ≥99.9% trace metals basis, our Sb(OMe)3 minimizes metallic contamination, helping researchers achieve reproducible film properties and reliable catalytic performance in organic synthesis and intermediate preparation.
At a purity level of ≥99.9% trace metals basis, our Sb(OMe)3 minimizes metallic contamination, helping researchers achieve reproducible film properties and reliable catalytic performance in organic synthesis and intermediate preparation.
Features and Benefits
High‑purity antimony(III) methoxide (≥99.9% trace metals basis) offers several important advantages:
[1] Ensures that ALD/CVD‑derived SbOₓ films have low defect densities and stable electrical/optical properties, since unwanted metal dopants are minimized.
[2] Reduces variability between batches, giving more reproducible growth rates, film composition, and device performance in microelectronics and optical coatings.
[3] Lowers the risk of side reactions and particle formation during processing, helping to keep reactors cleaner and extend maintenance intervals.
[4] Improves reliability of catalytic and organic synthesis applications, where trace metal impurities can poison catalysts or introduce difficult‑to-remove by‑products.
[1] Ensures that ALD/CVD‑derived SbOₓ films have low defect densities and stable electrical/optical properties, since unwanted metal dopants are minimized.
[2] Reduces variability between batches, giving more reproducible growth rates, film composition, and device performance in microelectronics and optical coatings.
[3] Lowers the risk of side reactions and particle formation during processing, helping to keep reactors cleaner and extend maintenance intervals.
[4] Improves reliability of catalytic and organic synthesis applications, where trace metal impurities can poison catalysts or introduce difficult‑to-remove by‑products.
signalword
Warning
hcodes
Hazard Classifications
Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Chronic 2
存储类别
11 - Combustible Solids
flash_point_f
Not applicable
flash_point_c
Not applicable

