硅

硅, powder, −325 mesh, 99% trace metals basis

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

硅, nanoparticles, 40 nm avg. part. size, ≥99% trace metals basis

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

硅, nanoparticles, 10 nm avg. part. size, ≥99% trace metals basis, battery grade

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

硅, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm

硅, pieces, 99.95% trace metals basis

硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

硅, powder, 45 max. part. size (micron), weight 10 g, high purity 99.999%

硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

硅, powder, max. particle size 150 micron, weight 500 g, purity 97.5%

硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%

硅, powder, 45 max. part. size (micron), weight 100 g, purity 99.95%