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237264

Resolve-Al La

99%

Synonym(s):

La(tmhd)3, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum

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About This Item

Linear Formula:
La(OCC(CH3)3CHCOC(CH3)3)3
CAS Number:
14319-13-2
Molecular Weight:
688.71
NACRES:
NA.21
PubChem Substance ID:
24854230
UNSPSC Code:
12142201
MDL number:
MFCD00010466
Assay:
99%
Bp:
370 °C (lit.)
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assay

99%

form

powder or crystals

bp

370 °C (lit.)

mp

128-131 °C (lit.)

SMILES string

CC(C)(C)C(=O)\C=C(/O[Yb](O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)C(C)(C)C

InChI

1S/3C11H20O2.La/c3*1-10(2,3)8(12)7-9(13)11(4,5)6;/h3*7,12H,1-6H3;/q;;;+3/p-3/b3*8-7-;

InChI key

IXHLTRHDDMSNAP-LWTKGLMZSA-K

Other Notes

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Legal Information

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

Regulatory Information

新产品

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Certificates of Analysis (COA)

Lot/Batch Number
MKAA3317
09209EB
08516MZ
06830AB

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Related Content

MOCVD of lanthanum oxides from La (tmhd)3 and La (tmod)3 precursors: A thermal and kinetic investigation.
Bedoya C, et al.
Chem. Vap. Deposition, 12(1), 46-53 (2006)
Structural and electrical properties of a La2O3 thin film as a gate dielectric.
Jun JH, et al.
The Journal of the Korean Physical Society, 11(6) (2002)
Study on the precursors for La2O3 thin films deposited on silicon substrate.
Jun J, et al.
Journal of Materials Science Letters, 21(23), 1847-1849 (2002)

Global Trade Item Number

SKUGTIN
237264-1G04061826671351