Skip to Content
Merck
CN

Key Documents

View All Documentation

333468

Silicon tetrabromide

99%

Synonym(s):

Tetrabromosilane

Sign In to View Organizational & Contract Pricing.

Select a Size

Change View

About This Item

Linear Formula:
SiBr4
CAS Number:
7789-66-4
Molecular Weight:
347.70
NACRES:
NA.23
PubChem Substance ID:
24860133
UNSPSC Code:
12352103
EC Number:
232-182-4
MDL number:
MFCD00049530
Technical Service
Need help? Our team of experienced scientists is here for you.
Let Us Assist

vapor density

2.8 (vs air)

Quality Level

100

assay

99%

form

liquid

reaction suitability

core: silicon

bp

153 °C (lit.)

mp

5 °C (lit.)

density

2.8 g/mL at 25 °C (lit.)

SMILES string

Br[Si](Br)(Br)Br

InChI

1S/Br4Si/c1-5(2,3)4

InChI key

AIFMYMZGQVTROK-UHFFFAOYSA-N

Application

Silicon tetrabromide (SiBr4) may be used to prepare photoluminescent silicon nanocrystals by chemical reduction with alkaline metals.

Still not finding the right product?

Explore all of our products under Silicon tetrabromide

pictograms

Corrosion
GHS05

signalword

Danger

hcodes

H314

Hazard Classifications

Eye Dam. 1 - Skin Corr. 1B

Storage Class

8B - Non-combustible corrosive hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

Choose from one of the most recent versions:

Certificates of Analysis (COA)

Lot/Batch Number
MKCQ6294
MKCQ1044
MKCM2552
MKCL1051
MKCL0576

Don't see the Right Version?

If you require a particular version, you can look up a specific certificate by the Lot or Batch number.

Search for a COA

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Articles

Silicon Nitride Atomic Layer Deposition: A Brief Review of Precursor Chemistry

atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer

Progress in Spintronic Materials

Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Double stabilization of nanocrystalline silicon: a bonus from solvent.
Kolyagin YG, et al.
Journal of Nanoparticle Research, 18(1), 17-17 (2016)
Photoluminescent silicon nanocrystals stabilized by ionic liquid.
Kamyshny A, et al.
Journal of Nanoparticle Research, 13(5), 1971-1978 (2011)

Global Trade Item Number

SKUGTIN
333468-10G04061838138965