grade
electronic grade
Quality Segment
assay
≥99.998% chemical purity basis
form
gas
impurities
≤50 ppm Higher silanes, <0.2 ppm Chlorosilanes, <1 ppm Argon (Ar) + Oxygen (O2), <1 ppm Carbon dioxide (CO2), <1 ppm Nitrogen (N2), <1 ppm THC, <1 ppm Water, <5 ppm Siloxanes
bp
−14.5 °C (lit.)
mp
−132.6 °C (lit.)
transition temp
critical temperature 150.9 °C
SMILES string
[SiH3][SiH3]
InChI
1S/H6Si2/c1-2/h1-2H3
InChI key
PZPGRFITIJYNEJ-UHFFFAOYSA-N
General description
Atomic number of base material: 14 Silicon
Application
外延硅和硅基电介质快速低温沉积的前体。
Features and Benefits
通过快速低温化学气相沉积 (LTCVD),本品可用于无定形硅、外延硅和硅基电介质的沉积。通过分子束外延 (MBE),与锗的固体原料相结合,还可用于硅锗薄膜的外延生长。外延硅和硅基电介质快速低温沉积的前体。
signalword
Danger
Hazard Classifications
Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
2A - Gases
wgk
WGK 3
flash_point_f
<50.0 °F - closed cup
flash_point_c
< 10 °C - closed cup
ppe
Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)



