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554073

Sigma-Aldrich

Rubrene

≥98%

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Synonym(s):
5,6,11,12-Tetraphenylnaphthacene
Empirical Formula (Hill Notation):
C42H28
CAS Number:
517-51-1
Molecular Weight:
532.67
Beilstein:
1917339
EC Number:
208-242-0
MDL number:
MFCD00003703
PubChem Substance ID:
24879373
NACRES:
NA.23

Assay

≥98%

mp

330-335 °C (lit.)

λmax

299 nm
460 nm (2nd)

SMILES string

c1ccc(cc1)-c2c3ccccc3c(-c4ccccc4)c5c(-c6ccccc6)c7ccccc7c(-c8ccccc8)c25

InChI

1S/C42H28/c1-5-17-29(18-6-1)37-33-25-13-14-26-34(33)39(31-21-9-3-10-22-31)42-40(32-23-11-4-12-24-32)36-28-16-15-27-35(36)38(41(37)42)30-19-7-2-8-20-30/h1-28H

InChI key

YYMBJDOZVAITBP-UHFFFAOYSA-N

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General description

Rubrene is a tetraphenyl derivative of tetracene that is used as an organic semiconductor. It is used as a source material in the fabrication of rubrene single crystal based transistors with carrier mobility over 10 cm2V−1s−1.

Application

Rubrene based thin films are used as semiconducting layers along with poly(vinylidene fluoride-terefluoroethylene) (PVDF-TeFE) as insulating layers for the fabrication of ferro-electric gate field effect transistors (FETs). It may also be used as high mobility transporting material in the development of single crystal FETs.
Reagent for chemiluminescence research and for transition metal complex ligation.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Intrinsic charge transport on the surface of organic semiconductors
Podzorov V, et al.
Physical Review Letters, 93(8), 086602-086602 (2004)
Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film
Kanashima T, et al.
Japanese Journal of Applied Physics, 53(4S), 04ED11-04ED11 (2014)
High performance of rubrene thin film transistor by weak epitaxy growth method
Chang H, et al.
Organic Electronics, 20, 43-48 (2015)
Field-effect transistors on rubrene single crystals with parylene gate insulator
Podzorov V, et al.
Applied Physics Letters, 82(11), 1739-1741 (2003)
Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
Stassen AF, et al.
Applied Physics Letters, 85(17), 3899-3901 (2004)
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