Lanthanum aluminum oxide

Single crystal lanthanum aluminate substrate lattices have a good lattice match with most perovskite-structured materials. It is an excellent substrate for the epitaxial growth of magnetic and ferro-electric thin films and high-temperature superconductors. Due to its dielectric properties it is also posses properties for low-loss microwave and dielectric resonance applications.

Rhombohedral at 25 °C (a = 5.357 Å, c = 13.22 Å); Cubic at >435 °C (a = 3.821 Å)

thermal expansion = 10 × 10^-6/°C; loss tangent at 10 GHz = ~3 × 10^-4 @ 300 K, 0.6 × 10^-4 @ 77 K; insoluble in mineral acids at 25 °C, soluble in H₃PO₃ at >150 °C