87921
Tetramethylsilane
≥99.0% (GC)
Synonym(s):
TMS
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About This Item
Linear Formula:
Si(CH3)4
CAS Number:
Molecular Weight:
88.22
UNSPSC Code:
12352103
NACRES:
NA.22
PubChem Substance ID:
EC Number:
200-899-1
Beilstein/REAXYS Number:
1696908
MDL number:
Assay:
≥99.0% (GC)
Technique(s):
GC/GC: suitable
Bp:
26-28 °C (lit.)
Vapor pressure:
11.66 psi ( 20 °C)
Product Name
Tetramethylsilane, ≥99.0% (GC)
autoignition temp.
842 °F
InChI key
CZDYPVPMEAXLPK-UHFFFAOYSA-N
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
SMILES string
C[Si](C)(C)C
vapor pressure
11.66 psi ( 20 °C)
assay
≥99.0% (GC)
form
liquid
technique(s)
GC/GC: suitable
refractive index
n20/D 1.358 (lit.)
n20/D 1.359
bp
26-28 °C (lit.)
mp
−99 °C (lit.)
density
0.648 g/mL at 25 °C (lit.)
storage temp.
2-8°C
Quality Level
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Application
Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.
signalword
Danger
hcodes
Hazard Classifications
Flam. Liq. 1
Storage Class
3 - Flammable liquids
wgk
WGK 3
flash_point_f
-16.6 °F - closed cup
flash_point_c
-27 °C - closed cup
ppe
Eyeshields, Faceshields, Gloves
Regulatory Information
危险化学品
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The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
August Andersson et al.
FEBS letters, 545(2-3), 139-143 (2003-06-14)
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