946974
Aluminum-tri-sec-butoxide
≥99.9% trace metals basis
Synonym(s):
Aluminum sec-butoxide
Sign In to View Organizational & Contract Pricing.
Select a Size
Change View
About This Item
Linear Formula:
Al[OCH(CH3)C2H5]3
CAS Number:
Molecular Weight:
246.32
UNSPSC Code:
12352103
Beilstein/REAXYS Number:
3910908
MDL number:
Quality Segment
assay
Al basis (%, EDTA titration), ≥99.9% trace metals basis (ICP-MASS/ICP-OES), ≥99.9% trace metals basis
form
liquid
autoignition temp.
763 °F
expl. lim.
9.8 %
impurities
<1000 ppmtrace (metals basis)
bp
200-206 °C/30 mmHg (lit.)
mp
200-206 °C
density
0.967 g/mL at 25 °C (lit.), 0.967 g/cm3
application(s)
semiconductor
semiconductor
SMILES string
CCC(C)O[Al](OC(C)CC)OC(C)CC
InChI
1S/3C4H9O.Al/c3*1-3-4(2)5;/h3*4H,3H2,1-2H3;/q3*-1;+3
InChI key
WOZZOSDBXABUFO-UHFFFAOYSA-N
General description
Aluminum-tri-sec-butoxide, a non-pyrophoric sol-gel precursor, appears as a colorless liquid. Highly moisture-sensitive, it readily hydrolyzes to aluminum oxide derivatives. Our ≥99.9% trace metals basis grade ensures ultra-low impurities for precise deposition, which is suitable for the synthesis of Al2O3 via atomic layer deposition (ALD) and Chemical vapor deposition (CVD) along with sol-gel precursors.
Application
Aluminum-tri-sec-butoxide or ATSB can be used
- As a suitable Al precursor for the synthesis of Al2O3 thin films via atomic layer desposition(ALD) and Chemical vapor deposition (CVD).
- As a precursor for the fabrication of Amorphous alumina–titania (Al2O3–TiO2) films on silicon substrates using low-pressure CVD along with titanium tetrachloride (TiCl4) with varying CO2 and H2 gas flows (ATSB/TiCl4/CO2/H2 system). Our Aluminum-tri-sec-butoxide (ATSB) with a purity of ≥99.9% trace metals basis is a highly valuable precursor for advanced thin film applications due to its exceptional purity and consistent performance. Its low impurity levels ensure minimal contamination, which is critical for producing uniform and high-quality Al2O3 films via atomic layer deposition (ALD) and chemical vapor deposition (CVD). This high purity contributes to enhanced film properties like improved dielectric strength, chemical stability, and uniform thickness, key factors for semiconductor and microelectronics industries.
- As a suitable Al precursor for the synthesis of Al2O3 thin films via atomic layer desposition(ALD) and Chemical vapor deposition (CVD).
- As a precursor for the fabrication of Amorphous alumina–titania (Al2O3–TiO2) films on silicon substrates using low-pressure CVD along with titanium tetrachloride (TiCl4) with varying CO2 and H2 gas flows (ATSB/TiCl4/CO2/H2 system). Our Aluminum-tri-sec-butoxide (ATSB) with a purity of ≥99.9% trace metals basis is a highly valuable precursor for advanced thin film applications due to its exceptional purity and consistent performance. Its low impurity levels ensure minimal contamination, which is critical for producing uniform and high-quality Al2O3 films via atomic layer deposition (ALD) and chemical vapor deposition (CVD). This high purity contributes to enhanced film properties like improved dielectric strength, chemical stability, and uniform thickness, key factors for semiconductor and microelectronics industries.
Features and Benefits
Has been utilized in making high-surface-area alumina using 2,4-pentanedione (Aldrich product P775-4) as a chelating agent.
Still not finding the right product?
Explore all of our products under Aluminum-tri-sec-butoxide
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 3 Dermal - Acute Tox. 4 Oral - Flam. Liq. 3
Storage Class
3 - Flammable liquids
flash_point_f
78.8 °F - closed cup
flash_point_c
26 °C - closed cup
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.