D213705
Diphenylsilanediol
95%
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About This Item
Linear Formula:
(C6H5)2Si(OH)2
CAS Number:
Molecular Weight:
216.31
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
EC Number:
213-427-4
Beilstein/REAXYS Number:
2523445
MDL number:
Product Name
Diphenylsilanediol, 95%
InChI key
OLLFKUHHDPMQFR-UHFFFAOYSA-N
InChI
1S/C12H12O2Si/c13-15(14,11-7-3-1-4-8-11)12-9-5-2-6-10-12/h1-10,13-14H
SMILES string
O[Si](O)(c1ccccc1)c2ccccc2
vapor density
>1 (vs air)
assay
95%
form
powder
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Application
DPSD may be used as a precursor in the synthesis of linear vinyl oligosiloxane resins which can be potentially used in the fabrication of thermally resistant light emitting diode(LED) encapsulant. Mercaptopropyl-phenyl-oligosiloxane and phenyl-vinyl-oligosiloxane may be synthesized by using DPSD which can further be used as a thiolene derived dielectric layer for organic thin film transistors.
General description
Diphenylsilanediol(DPSD) is an alkoxysilane that is used as a silane based precusor in the synthesis of organosiloxane based resins.
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Mechanism and nanosize products of the sol-gel reaction using diphenylsilanediol and 3-methacryloxypropyltrimethoxysilane as precursors.
Kim SY, et al.
The Journal of Physical Chemistry, 109(19), 9397-9403 (2005)
J G Cunningham et al.
American journal of veterinary research, 42(12), 2178-2181 (1981-12-01)
A controlled clinical trial of the anti-epileptic efficacy and toxic side effects of diphenylsilanediol was conducted on 24 client-owned epileptic dogs. Data obtained from an abbreviated procedural treatment program indicated that diphenylsilanediol compared favorably with primidone as an anti-epileptic compound
The Reactions of Triphenylsilanol and Diphenylsilanediol with Some Titanium Esters.
Zeitler VA, et al.
Journal of the American Chemical Society, 79(1), 4618-4621 (1957)
Thiol-Ene Reaction Derived Sol-Gel Hybrid Dielectric Layer for Oragnic Thin Film Transistors.
Kim J, et al.
ECS Transactions, 50(4), 83-88 (2013)
Hyeon-Gyun Im et al.
ACS applied materials & interfaces, 12(50), 56462-56469 (2020-12-02)
Metal nanowires (NWs) are promising transparent conducting electrode (TCE) materials because of their excellent optoelectrical performance, intrinsic mechanical flexibility, and large-scale processability. However, the surface roughness, thermal/chemical instability, and limited electrical conductivity associated with empty spaces between metal NWs are
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