GRFETS20
Graphene FET chip
S20
Synonym(s):
2-probe FET device, 2-probe Graphene FET sensor, Chemical gated Graphene FET, GFET S20, Graphene field effect transistor chip S20
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About This Item
description
Absolute Maximum Ratings
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2, Chip dimensions: 10 mm x 10 mm, Chip thickness: 675 μm, Dirac point: < 50 V
Yield >75%, Encapsulation: 50 nm Al2O3 + 100 nm Si3N4, Gate oxide materials: 90 nm SiO2, Graphene field-effect mobility: >1000 cm2/V·s, Monolayer CVD grown Graphene based 2-probe field effect transistors (FET)., Number of devices per chip: 12, Resistivity of substrate: 1-10 Ω·cm
Metallization: Chromium/Gold-Palladium 2/50 nm
General description
The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.
Application
- Bioelectronics
- FET based sensor research for active materials deposited on graphene
- Clinical applications
- Biosensors
Features and Benefits
- State-of-the-art GFETs utilizing consistently high-quality CVD monolayer graphene
- Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment
- Perfect platform device for new sensor research and development
- 12 individual GFETs per chip
- A central gate electrode
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Storage Class
11 - Combustible Solids
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flash_point_f
Not applicable
flash_point_c
Not applicable
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