assay
99.999% trace metals basis
form
chips
reaction suitability
core: germanium
resistivity
53 Ω-cm, 20°C
particle size
≥3 mm
bp
2830 °C (lit.)
mp
937 °C (lit.)
density
5.35 g/mL at 25 °C (lit.)
SMILES string
[Ge]
InChI
1S/Ge
InChI key
GNPVGFCGXDBREM-UHFFFAOYSA-N
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存储类别
13 - Non Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
商品
Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.
Minxian Wu et al.
Physical chemistry chemical physics : PCCP, 15(14), 4955-4964 (2013-02-27)
The electrodeposition of germanium from the ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide ([BMP][DCA]) and a mixture of [BMP][DCA] and 1-butyl-1-methylpyrrolidinium chloride ([BMP]Cl) was studied using cyclic voltammetry and using an electrochemical quartz crystal microbalance (EQCM). [GeCl4(BuIm)2] (BuIm = N-butylimidazole) was used as
Miroslav Cerný et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035401-035401 (2012-12-15)
The response of three covalent crystals with a diamond lattice (C, Si and Ge) to uniaxial and a special triaxial (generally nonhydrostatic) loading is calculated from first principles. The lattice deformations are described in terms of variations of bond lengths
Fabian von Rohr et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 075804-075804 (2013-01-25)
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi(4)Te(7), GeSb(4)Te(7) and Ge(Bi(1-x)Sb(x))(4)Te(7) solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 203343-25G | 04061838765888 |
| 203343-5G | 04061838765895 |