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203424

Sigma-Aldrich

氧化铟(III)

99.998% trace metals basis

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别名:
三氧化二铟, 氧化铟
经验公式（希尔记法）:
In2O3
CAS号:
1312-43-2
分子量:
277.63
EC 号:
215-193-9
MDL编号:
MFCD00011060
PubChem化学物质编号:
24852170
NACRES:
NA.23

蒸汽压

<0.01 mmHg ( 25 °C)

质量水平

100

检测方案

99.998% trace metals basis

形式

powder

反应适用性

reagent type: catalyst
core: indium

密度

7.18 g/mL at 25 °C (lit.)

应用

battery manufacturing

SMILES字符串

O=[In]O[In]=O

InChI

1S/2In.3O

InChI key

SHTGRZNPWBITMM-UHFFFAOYSA-N

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相关类别

储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves

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Yiping Fang et al.
Langmuir : the ACS journal of surfaces and colloids, 27(23), 14091-14095 (2011-10-21)
In(2)O(3)@SiO(2) core-shell nanoparticles were prepared using an organic solution synthesis approach and reverse-microemulsion technique. In order to explore the availability of various silica encapsulations, a partial phase diagram for this ternary system consisting of hexane/cyclohexane (1:29 wt), surfactant (polyoxyethylene(5)nonylphenyl ether
Kelvin H L Zhang et al.
ACS nano, 6(8), 6717-6729 (2012-06-30)
The growth of In(2)O(3) on cubic Y-stabilized ZrO(2)(001) by molecular beam epitaxy leads to formation of nanoscale islands which may tilt relative to the substrate in order to help accommodate the 1.7% tensile mismatch between the epilayer and the substrate.
Ilan Jen-La Plante et al.
Small (Weinheim an der Bergstrasse, Germany), 9(1), 56-60 (2012-11-06)
Nano popcorn: a new formation mechanism for the synthesis of hollow metal oxide nanoparticles through a melt fracture mechanism. The hollow nanoparticles are formed via brittle fracture following the generation of tensile stresses arising due to liquid-phase thermal expansion of
Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
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