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Merck
CN

203815

氧化钼(VI)

99.97% trace metals basis

别名:

三氧化钼

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关于此项目

线性分子式:
MoO3
化学文摘社编号:
1313-27-5
分子量:
143.94
PubChem Substance ID:
24852067
eCl@ss:
38180807
UNSPSC Code:
12352303
NACRES:
NA.23
EC Number:
215-204-7
MDL number:
MFCD00003469

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产品名称

氧化钼(VI), 99.97% trace metals basis

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

InChI

1S/Mo.3O

SMILES string

O=[Mo](=O)=O

assay

99.97% trace metals basis

form

powder

mp

795 °C (lit.)

application(s)

battery manufacturing

Quality Level

100

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相关类别

Application

用于固态合成显著的三元还原氧化钼，Pr4Mo9018，其结构包含以前未知的Mo7、Mo13和Mo9结构簇。新的集合结构产品是一种小带隙半导体。
LAMOX 快离子导体和超导体的前体。
用于固态合成显著的三元还原氧化钼，Pr4Mo9O18，其结构包含以前未知的Mo7、Mo13和Mo19的集合。新的集合结构产品是一种小带隙半导体。

General description

氧化钼（VI），也称三氧化钼，是钼和氧的化合物，近似化学式为MoO3。它通常是白色或浅黄色，不过氧化钼（VI）中可能存在大量缺陷，包括氧空位，这使其呈浅蓝色或浅绿色。氧化钼（VI）具有 2,620 °C的高熔点。从化学性质来看，氧化钼（VI）是强氧化剂，具有高功函数。 因此，它可用作化学反应的催化剂以及生产其它钼化合物的起始原料。此外，它还可以添加到色素、玻璃、润滑剂和塑料中。

pictograms

Health hazardExclamation mark
GHS08,GHS07

signalword

Warning

Hazard Classifications

Carc. 2 - Eye Irrit. 2 - STOT SE 3

target_organs

Respiratory system

存储类别

11 - Combustible Solids

wgk

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Faceshields, Gloves

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
0000513615
0000513615
0000381894
0000381894
0000270145

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Di-Yan Wang et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3415-3420 (2012-06-08)
A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS(2) nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS(2) nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a
Yu-Zhan Wang et al.
The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical
Claudio Girotto et al.
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.
Nicholas P Sergeant et al.
Advanced materials (Deerfield Beach, Fla.), 24(6), 728-732 (2012-01-04)
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