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关于此项目
线性分子式:
(SiCl3)2
化学文摘社编号:
分子量:
268.89
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
236-704-1
MDL number:
InChI key
LXEXBJXDGVGRAR-UHFFFAOYSA-N
InChI
1S/Cl6Si2/c1-7(2,3)8(4,5)6
SMILES string
Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl
assay
96%
form
liquid
refractive index
n20/D 1.475 (lit.)
bp
144-145.5 °C (lit.)
density
1.562 g/mL at 25 °C (lit.)
General description
六氯乙硅烷(HCDS)是一种氯硅烷,可用作生产乙硅烷的前体。它是一种用于生产硅膜和氮化硅基膜的脱氧剂。
Application
HCDS可用于通过化学气相沉积(CVD)制备二氧化硅气凝胶,其有望用作封装剂和绝热体。它也可用于通过CVD合成1,1,1,2,2,2-六氨基乙硅烷,其可形成微电子应用的硅基薄膜。
HCDS可用作还原剂。它可以通过化学气相沉积(CVD)技术与氨结合形成氮化硅。
signalword
Danger
hcodes
Hazard Classifications
Skin Corr. 1B
supp_hazards
存储类别
8A - Combustible corrosive hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
Enhancing mechanical properties of silica aerogels.
Obrey KAD, et al.
Journal of Non-Crystalline Solids, 357(19-20), 3435-3441 (2011)
Initial Reaction of Hexachlorodisilane on Amorphous Silica Surface for Atomic Layer Deposition Using Density Functional Theory.
Kim K, et al.
Journal of the Korean Ceramic Society, 54(5), 443-447 (2017)
Use of hexachlorodisilane as a reducing agent. Stereospecific deoxygenation of acyclic phosphine oxides.
Naumann K, et al.
Journal of the American Chemical Society, 91(25), 7012-7023 (1969)
The Research about Preparation of High Purity Hexachlorodisilane.
IOP Conference Series: Materials Science and Engineering, 274(1), 012125-012125 (2017)
Chemical vapor deposition of silicon films using hexachlorodisilane
Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings, 77, 709-709 (1986)
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