205184
六氯乙硅烷
96%
别名:
1,1,1,2,2,2-六氯二硅烷, HCDS, 六氯化二硅
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关于此项目
线性分子式:
(SiCl3)2
化学文摘社编号:
分子量:
268.89
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
236-704-1
MDL number:
产品名称
六氯乙硅烷, 96%
InChI key
LXEXBJXDGVGRAR-UHFFFAOYSA-N
InChI
1S/Cl6Si2/c1-7(2,3)8(4,5)6
SMILES string
Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl
assay
96%
form
liquid
refractive index
n20/D 1.475 (lit.)
bp
144-145.5 °C (lit.)
density
1.562 g/mL at 25 °C (lit.)
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Application
HCDS可用于通过化学气相沉积（CVD）制备二氧化硅气凝胶，其有望用作封装剂和绝热体。它也可用于通过CVD合成1,1,1,2,2,2-六氨基乙硅烷，其可形成微电子应用的硅基薄膜。
HCDS可用作还原剂。它可以通过化学气相沉积（CVD）技术与氨结合形成氮化硅。
General description
六氯乙硅烷（HCDS）是一种氯硅烷，可用作生产乙硅烷的前体。它是一种用于生产硅膜和氮化硅基膜的脱氧剂。
signalword
Danger
hcodes
Hazard Classifications
Skin Corr. 1B
supp_hazards
存储类别
8A - Combustible corrosive hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
Chemical vapor deposition of silicon films using hexachlorodisilane
Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings, 77, 709-709 (1986)
The Raman Spectrum of Hexachlorodisilane
Katayama M, et al.
J. Chem. Phys. , 18(4), 506-509 (1950)
Enhancing mechanical properties of silica aerogels
Obrey, K. A., Wilson, K. V., & Loy, D. A.
Journal of Non-Crystalline Solids, 375(19), 3435-3441 (2011)
Film Properties of Low?k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia.
Tanaka M , et al.
Journal of the Electrochemical Society, 147(6), 2284-2289 (2000)
Z Yu et al.
Journal of chromatography. A, 903(1-2), 183-191 (2001-01-12)
Carbon isotopic compositions of aetio I occurring in the form of free-base, nickel, demetallation, dihydroxysilicon(IV) and bis(tert.-butyldimethylsiloxy)silicon(IV) [(tBDMSO)2Si(IV)] have shown that it has experienced no obvious isotope fractionation during the synthesis of [(tBDMSO)2Si(IV)] porphyrin from aetio I. Here, aetio I
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