InChI key
GUCVJGMIXFAOAE-UHFFFAOYSA-N
InChI
1S/Nb
SMILES string
[Nb]
assay
99.8% trace metals basis
form
foil
resistivity
13-16 μΩ-cm, 20°C
thickness
0.25 mm
bp
4742 °C (lit.)
mp
2468 °C (lit.)
density
8.57 g/mL at 25 °C (lit.)
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Preparation Note
10.7g = 50×100mm;32.1g = 100×150mm
存储类别
13 - Non Combustible Solids
wgk
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
Evgeniy Papulovskiy et al.
Physical chemistry chemical physics : PCCP, 15(14), 5115-5131 (2013-03-02)
Ab initio DFT calculations of (93)Nb NMR parameters using the NMR-CASTEP code were performed for a series of over fifty individual niobates, and a good agreement has been found with experimental NMR parameters. New experimental and calculated (93)Nb NMR data
M I Tsindlekht et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085701-085701 (2013-01-31)
We report results of measurements of the ac conductivity of a Nb superconducting thin film in a swept dc magnetic field. In the mixed state the swept dc field creates vortices at the film surface which pass through the film
Yan Sheng et al.
Optics express, 21(4), 4475-4480 (2013-03-14)
We propose and fabricate a LiNbO₃-based nonlinear photonic crystal with locally ordered ferroelectric domains. The nonlinearity modulation provides sets of uniformly distributed reciprocal lattice vectors, ensuring broadband high frequency conversion efficiency. Frequency tripling via cascading is demonstrated in the range
Tzyy-Jiann Wang et al.
Optics express, 20(27), 28119-28124 (2012-12-25)
We report ultra-smooth LiNbO(3) microdisk resonators fabricated by selective ion implantation, chemical etching, and thermal treatment. The undercut microdisk structure is produced by chemically etching the buried lattice damage layer formed by selective ion implantation. By thermal treatment, surface tension
Huaxiang Yi et al.
Optics express, 20(25), 27562-27568 (2012-12-25)
We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also
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