264059
铟
foil, thickness 0.127 mm, 99.99% trace metals basis
别名:
铟元素
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关于此项目
经验公式（希尔记法）:
In
化学文摘社编号:
分子量:
114.82
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141719
EC Number:
231-180-0
MDL number:
产品名称
铟, foil, thickness 0.127 mm, 99.99% trace metals basis
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
InChI
1S/In
SMILES string
[In]
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.99% trace metals basis
form
foil
resistivity
8.37 μΩ-cm
thickness
0.127 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
Quality Level
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Application
铟箔是用于低温的具有高电导率的热界面材料。它也可以用作铟蒸气源，用于在硅衬底上制备氮化铟纳米线。它也可用于飞行时间二次离子质谱（ToF-SIMS） 分析粉末样品。
General description
铟(In)是银白色的后过渡金属，以其低熔点和独特性质著称。密度约7.31 g/cm3，具有良好的可塑性和延展性，适用无数应用领域。铟广泛用于电子行业，尤其可用于制备触摸屏和平板显示器件的材料氧化铟锡(ITO)。还用于制作焊料、涂料，也用作合金化试剂增强其它金属性能。本品为高纯度铟箔，厚度0.127 mm，纯度99.99%（微量金属分析法），尤其适合要求杂质尽可能低的各种应用。
Preparation Note
2.3 g = 50 × 50 mm；9.2 g = 100 × 100 mm
signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
存储类别
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
Wood Science and Technology, 45(4), 767-785 (2011)
Cryogen-free operation of 10 V programmable Josephson voltage standards
Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
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