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Merck
CN

277959

Sigma-Aldrich

powder, 99.99% trace metals basis

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关于此项目

经验公式(希尔记法):
In
CAS Number:
分子量:
114.82
EC 号:
MDL编号:
UNSPSC代码:
12141719
PubChem化学物质编号:
NACRES:
NA.23
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蒸汽压

<0.01 mmHg ( 25 °C)

质量水平

方案

99.99% trace metals basis

表单

powder

电阻率

8.37 μΩ-cm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES字符串

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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一般描述

铟是一种银白色的软金属,具有面心四方晶体结构。它在3.37 K下具有超导性。它可以改善合金的′硬度、耐腐蚀性和强度。

应用

铟可用作:

  • 调节 CdSe 纳米线电子和光电子特性的掺杂剂。
  • 镁离子电池的负极材料。
  • 由于其第一电离势低可用作许多有机转化反应的还原剂。

象形图

FlameExclamation mark

警示用语:

Danger

危险分类

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

靶器官

Respiratory system

储存分类代码

4.1B - Flammable solid hazardous materials

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
Zhubing He et al.
Small (Weinheim an der Bergstrasse, Germany), 5(3), 345-350 (2008-12-06)
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer

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