277959
铟
powder, 99.99% trace metals basis
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关于此项目
经验公式（希尔记法）:
In
化学文摘社编号:
分子量:
114.82
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141719
EC Number:
231-180-0
MDL number:
General description
铟是一种银白色的软金属，具有面心四方晶体结构。它在3.37 K下具有超导性。它可以改善合金的′硬度、耐腐蚀性和强度。
Application
铟可用作：
- 调节 CdSe 纳米线电子和光电子特性的掺杂剂。
- 镁离子电池的负极材料。
- 由于其第一电离势低可用作许多有机转化反应的还原剂。
signalword
Danger
存储类别
4.1B - Flammable solid hazardous materials
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type P3 (EN 143) respirator cartridges
hcodes
Hazard Classifications
Flam. Sol. 1 - STOT RE 1 Inhalation
target_organs
Lungs
Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
Zhubing He et al.
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Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
J S Fandiño et al.
Optics express, 21(3), 3726-3736 (2013-03-14)
We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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