277959
铟
powder, 99.99% trace metals basis
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关于此项目
经验公式（希尔记法）:
In
化学文摘社编号:
分子量:
114.82
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141719
EC Number:
231-180-0
MDL number:
产品名称
铟, powder, 99.99% trace metals basis
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
InChI
1S/In
SMILES string
[In]
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.99% trace metals basis
form
powder
resistivity
8.37 μΩ-cm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
Quality Level
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Application
铟可用作：
- 调节 CdSe 纳米线电子和光电子特性的掺杂剂。
- 镁离子电池的负极材料。
- 由于其第一电离势低可用作许多有机转化反应的还原剂。
General description
铟是一种银白色的软金属，具有面心四方晶体结构。它在3.37 K下具有超导性。它可以改善合金的′硬度、耐腐蚀性和强度。
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
4.1B - Flammable solid hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type P3 (EN 143) respirator cartridges
Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
Zhubing He et al.
Small (Weinheim an der Bergstrasse, Germany), 5(3), 345-350 (2008-12-06)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
R C Longo et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01)
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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