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Merck
CN

326127

硝酸铟(III) 水合物

99.99% trace metals basis

别名:

Indium trinitrate hydrate, Indium(3+) trinitrate hydrate

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线性分子式:
In(NO3)3 · xH2O
化学文摘社编号:
分子量:
300.83 (anhydrous basis)
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352302
EC Number:
237-393-5
MDL number:
Assay:
99.99% trace metals basis
Form:
powder and chunks
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产品名称

硝酸铟(III) 水合物, 99.99% trace metals basis

InChI key

YZZFBYAKINKKFM-UHFFFAOYSA-N

InChI

1S/In.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1;

SMILES string

[In+3].[H]O[H].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O

assay

99.99% trace metals basis

form

powder and chunks

reaction suitability

core: indium
reagent type: catalyst

impurities

≤150.0 ppm Trace Metal Analysis

Quality Level

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Application

硝酸铟(III)水合物用于制备基于铟的基底,用于制造半导体器件(例如薄膜晶体管)。

General description

硝酸铟(III)水合物是铟的前体溶液,可在 500°C 退火,旋涂形成氧化铟薄膜。

pictograms

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signalword

Danger

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Ox. Sol. 2

存储类别

5.1B - Oxidizing hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

法规信息

危险化学品
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历史批次信息供参考:

分析证书(COA)

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High electrical performance of wet-processed indium zinc oxide thin-film transistors
Park K, et al.
IEEE Electron Device Letters, 31(4), 311-313 (2010)
Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles
Bagheri-Mohagheghi M-M, et al.
Physica E: Low-Dimensional Systems and Nanostructures, 41(10), 1757-1762 (2009)
Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method
Lau LN, et al.
Applied Surface Science, 345, 355-359 (2015)
William J Scheideler et al.
ACS applied materials & interfaces, 10(43), 37277-37286 (2018-10-10)
Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the

商品

Colloidal quantum dots (CQDs) are semiconducting crystals of only a few nanometers (ca. 2–12 nm) coated with ligand/surfactant molecules to help prevent agglomeration.

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