334103
氮化硅
powder, ≥99.9% trace metals basis
别名:
Trisilicon tetranitride
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关于此项目
线性分子式:
Si3N4
化学文摘社编号:
分子量:
140.28
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
质量水平
方案
≥99.9% trace metals basis
表单
powder
粒径
<1 μm
密度
3.44 g/mL at 25 °C (lit.)
SMILES字符串
N12[Si]34N5[Si]16N3[Si]25N46
InChI
1S/N4Si3/c1-5-2-6(1)3(5)7(1,2)4(5)6
InChI key
HQVNEWCFYHHQES-UHFFFAOYSA-N
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一般描述
氮化硅基陶瓷具有较高的断裂韧性、硬度和耐磨性、耐腐蚀性、热稳定性已知的氮化硅多晶型有两种,α和β Si3N4,它们都具有六方结构。一项研究表明,研究人员还合成了第三种形态,立方尖晶石结构。
储存分类代码
11 - Combustible Solids
WGK
nwg
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
Synthesis of cubic silicon nitride
Zerr A, et al
Nature, 400, 340-342 null
Silicon Nitride and Related Materials
Riley FR
Journal of the American Ceramic Society. American Ceramic Society, 83(2), 245-265 (2000)
Tingyin Ning et al.
Optics express, 21(2), 2012-2017 (2013-02-08)
We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(³) (-3ω,ω,ω,ω) = (2.8 ± 0.6) ×
Weihua Guan et al.
Lab on a chip, 13(7), 1431-1436 (2013-02-16)
The intrinsic charging status at the dielectric-electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges
Nazar Ileri et al.
Physical chemistry chemical physics : PCCP, 15(3), 965-971 (2012-12-06)
Millimeter sized arrays of uniformly-distributed nanopores (180-220 nm) were created in thin (200 nm) silicon nitride membranes using interferometric lithography. Molecular transport properties of the fabricated devices were investigated experimentally and compared with those of state-of-the-art polycarbonate track etched membranes.
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