vapor pressure
<0.01 mmHg ( 25 °C)
Quality Level
assay
99.99% trace metals basis
form
foil
composition
In
reaction suitability
core: indium
resistivity
8.37 μΩ-cm
thickness
0.25 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
General description
Indium foil is widely used in nuclear facilities to capture thermal neutrons, because it shows a high cross section of neutron capture reaction. Hence, it may be used in dosemeters to measure exposure. Indium foils were studied for simultaneous monitoring neutron and photon intensities in a reactor core.
Application
- High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers.: Explores the enhancement of ionic conductivity in polymer electrolytes through the incorporation of indium arsenide nanowires, offering significant implications for battery efficiency ( Devi et al., 2021).
- A Corrosion-Resistant and Dendrite-Free Zinc Metal Anode in Aqueous Systems.: Introduces a corrosion-resistant indium-containing anode design for aqueous batteries, which prevents dendrite formation and enhances overall battery safety ( Han et al., 2020).
Preparation Note
4.6g = 50×50mm;18.4g = 100×100mm;41.4g = 150×150mm
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signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
存储类别
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
商品
Combinatorial Materials Science identifies breakthrough materials through systematic exploration, aiding material discovery.
Recalibration of Indium foil for personnel screening in criticality accidents
Takada C, et al.
Radiation Protection Dosimetry, 144(1-4), 575-579 (2010)
Activation detection using indium foils for simultaneous monitoring neutron and photon intensities in a reactor core.
Chao JH and Chiang AC
Radiation Measurements, 45, 1024-1033 (2010)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 357294-225CM2 | 04061833606452 |
| 357294-25CM2 | 04061833606476 |
| 357294-100CM2 | 04061833606438 |
