产品名称
铟, foil, thickness 0.25 mm, 99.99% trace metals basis
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
InChI
1S/In
SMILES string
[In]
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.99% trace metals basis
form
foil
resistivity
8.37 μΩ-cm
thickness
0.25 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
Quality Level
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Preparation Note
4.6g = 50×50mm;18.4g = 100×100mm;41.4g = 150×150mm
Application
- High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers.: Explores the enhancement of ionic conductivity in polymer electrolytes through the incorporation of indium arsenide nanowires, offering significant implications for battery efficiency ( Devi et al., 2021).
- A Corrosion-Resistant and Dendrite-Free Zinc Metal Anode in Aqueous Systems.: Introduces a corrosion-resistant indium-containing anode design for aqueous batteries, which prevents dendrite formation and enhances overall battery safety ( Han et al., 2020).
General description
Indium foil is widely used in nuclear facilities to capture thermal neutrons, because it shows a high cross section of neutron capture reaction. Hence, it may be used in dosemeters to measure exposure. Indium foils were studied for simultaneous monitoring neutron and photon intensities in a reactor core.
signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
存储类别
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Recalibration of Indium foil for personnel screening in criticality accidents
Takada C, et al.
Radiation Protection Dosimetry, 144(1-4), 575-579 (2010)
Activation detection using indium foils for simultaneous monitoring neutron and photon intensities in a reactor core.
Chao JH and Chiang AC
Radiation Measurements, 45, 1024-1033 (2010)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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