方案
99.9% trace metals basis
密度
7.5 g/mL at 25 °C (lit.)
SMILES字符串
[PbH2]=S
InChI
1S/Pb.S
InChI key
XCAUINMIESBTBL-UHFFFAOYSA-N
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一般描述
PbS 可从铅 (II) 盐和硫化氢溶液中沉淀。
应用
PbS 可用于电信。2
包装
塑料瓶包装
警示用语：
Danger
危险分类
Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Repr. 1A - STOT RE 2
储存分类代码
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type P3 (EN 143) respirator cartridges
Zhenhua Sun et al.
Advanced materials (Deerfield Beach, Fla.), 24(43), 5878-5883 (2012-09-01)
Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability.
Somobrata Acharya et al.
Nano letters, 13(2), 409-415 (2013-01-10)
Two-dimensional (2D) sheets are currently in the spotlight of nanotechnology owing to high-performance device fabrication possibilities. Building a free-standing quantum sheet with controlled morphology is challenging when large planar geometry and ultranarrow thickness are simultaneously concerned. Coalescence of nanowires into
Piezoelectric-polarization-enhanced photovoltaic performance in depleted-heterojunction quantum-dot solar cells.
Jian Shi et al.
Advanced materials (Deerfield Beach, Fla.), 25(6), 916-921 (2012-11-28)
Ana Querejeta-Fernández et al.
ACS nano, 6(5), 3800-3812 (2012-04-21)
A lot of interesting and sophisticated examples of nanoparticle (NP) self-assembly (SA) are known. From both fundamental and technological standpoints, this field requires advancements in three principle directions: (a) understanding the mechanism and driving forces of three-dimensional (3D) SA with
Dayong Zhang et al.
Advanced materials (Deerfield Beach, Fla.), 24(20), 2715-2720 (2012-04-17)
An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with the purpose of building a tunable photosensor with a responsivity of more than 10(3) A W(-1) . It is remarkable that rational utilization of
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