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Merck
CN

483591

金刚石

synthetic monocrystalline powder, ≤1 μm

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经验公式(希尔记法):
C
化学文摘社编号:
分子量:
12.01
UNSPSC Code:
12352103
EC Number:
231-953-2
NACRES:
NA.23
MDL number:
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产品名称

金刚石, synthetic monocrystalline powder, ≤1 μm

form

synthetic monocrystalline powder

particle size

≤1 μm

density

3.5 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

Quality Level

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Application

Monocrystalline diamond particles internalized in human endothelial cells have potential applications in drug delivery.

存储类别

11 - Combustible Solids

wgk

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

法规信息

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历史批次信息供参考:

分析证书(COA)

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Micron-sized diamond particles are internalized by endothelial cells.
Walkowiak B, et al.
Diamond and Related Materials, 18, 651-656 (2009)
Richard W Bowman et al.
Physical review letters, 110(9), 095902-095902 (2013-03-19)
Diamond anvil cells allow the behavior of materials to be studied at pressures up to hundreds of gigapascals in a small and convenient instrument. However, physical access to the sample is impossible once it is pressurized. We show that optical
H Pinto et al.
Journal of nanoscience and nanotechnology, 12(11), 8589-8593 (2013-02-21)
We have investigated using density functional theory the effect of fluorine termination of a (001) diamond surface on the electronic energy levels of an NV- centre buried beneath the surface. We find that, like OH termination, fluorine passivates the surface
P Pereira Nogueira et al.
The Journal of clinical pediatric dentistry, 37(1), 53-57 (2013-01-25)
The aim of the present study was to evaluate hybrid layer thickness of primary molars sectioned with diamond, carbide and ultrasonic CVD burs. The occlusal enamel surfaces often molars were removed and superficial dentin was exposed. Three standardized cavities were
Pontus Forsberg et al.
Optics express, 21(3), 2693-2700 (2013-03-14)
Control of the sidewall angle of diamond microstructures was achieved by varying the gas mixture, bias power and mask shape during inductively coupled plasma etching. Different etch mechanisms were responsible for the angle of the lower and upper part of

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