vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.95%
form
bars
reaction suitability
core: indium
resistivity
8.37 μΩ-cm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
存储类别
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
此项目有
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 57083-10G-F | 04061833483176 |