651478
锑化镓
(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm
别名:
Gallium antimony, Gallium monoantimonide
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关于此项目
线性分子式:
GaSb
化学文摘社编号:
分子量:
191.48
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
235-058-8
MDL number:
InChI key
VTGARNNDLOTBET-UHFFFAOYSA-N
InChI
1S/Ga.Sb
SMILES string
[Ga]#[Sb]
form
(single crystal substrate)
resistivity
~0.1 Ω-cm
diam. × thickness
2 in. × 0.5 mm
mp
710 °C, 980 °C (lit.)
density
5.619 g/mL at 25 °C, 5.62 g/mL at 25 °C (lit.)
semiconductor properties
<100>
General description
未掺杂的 P 型半导体，生长技术：液封直拉法，载流子浓度 = 1-2×10-17cm-3，蚀坑密度 <103cm-2
热膨胀：6.1×10-6/oK；热导率：270mW/cm.k (300K)；迁移率 600~800cm2/V⋅s
Physical form
立方晶系 (a = 6.095Å)
signalword
Warning
hcodes
pcodes
Hazard Classifications
Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Chronic 2
存储类别
13 - Non Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
法规信息
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实验方案
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
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