651494
磷化镓
(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm
别名:
Gallium monophosphide
登录 查看组织和合同定价。
选择尺寸
关于此项目
线性分子式:
GaP
化学文摘社编号:
分子量:
100.70
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
235-057-2
MDL number:
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
InChI
1S/Ga.P
SMILES string
[P]#[Ga]
form
(single crystal substrate)
resistivity
~0.3 Ω-cm
diam. × thickness
2 in. × 0.5 mm
mp
1480 °C
density
4.13 g/mL at 25 °C
semiconductor properties
<111>
Quality Level
正在寻找类似产品? 访问 产品对比指南
General description
未掺杂的（N 型半导体），载流子浓度 = 2-6×1016cm-3，蚀坑密度 <3×105cm-2，生长技术为液封直拉法
热膨胀：5.3×10-6/°C
Physical form
立方晶系 (a = 5.4505Å)
signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
11 - Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
此项目有
Cecilia E Linsmeier et al.
Biomaterials, 29(35), 4598-4604 (2008-09-20)
Neural devices may play an important role in the diagnosis and therapy of several clinical conditions, such as stroke, trauma or neurodegenerative disorders, by facilitating motor and pain control. Such interfaces, chronically implanted in the CNS, need to be biocompatible
Santosh Khanal et al.
Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
Kelley Rivoire et al.
Optics express, 17(25), 22609-22615 (2010-01-07)
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion effciency P(out)/P(2)(in,coupled)=430%/W. The large electronic
Dion McIntosh et al.
Optics express, 19(20), 19607-19612 (2011-10-15)
Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than
商品
Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
实验方案
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
相关内容
Technical Bulletins
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系客户支持