651494
磷化镓
(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm
别名:
Gallium monophosphide
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关于此项目
线性分子式:
GaP
化学文摘社编号:
分子量:
100.70
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
235-057-2
MDL number:
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
InChI
1S/Ga.P
SMILES string
[P]#[Ga]
form
(single crystal substrate)
resistivity
~0.3 Ω-cm
diam. × thickness
2 in. × 0.5 mm
mp
1480 °C
density
4.13 g/mL at 25 °C
semiconductor properties
<111>
Quality Level
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General description
未掺杂的（N 型半导体），载流子浓度 = 2-6×1016cm-3，蚀坑密度 <3×105cm-2，生长技术为液封直拉法
热膨胀：5.3×10-6/°C
Physical form
立方晶系 (a = 5.4505Å)
signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
11 - Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
此项目有
Jianwei Sun et al.
Journal of the American Chemical Society, 133(48), 19306-19309 (2011-11-05)
Colloidal GaP nanowires (NWs) were synthesized on a large scale by a surfactant-free, self-seeded solution-liquid-solid (SLS) method using triethylgallium and tris(trimethylsilyl)phosphine as precursors and a noncoordinating squalane solvent. Ga nanoscale droplets were generated in situ by thermal decomposition of the
Marcos Paulo Pinheiro Ferreira et al.
Photomedicine and laser surgery, 27(6), 901-906 (2009-08-25)
To evaluate the effect of phototherapy on the viability of cultured C2C12 myoblasts under different nutritional conditions (muscle injury model) using low-energy gallium-aluminum-arsenide (GaAlAs) and aluminium-gallium-indium-phosphide (InGaAlP) lasers with different wavelengths and powers. The beneficial effects of phototherapy using low-energy
Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
Jian Wu et al.
Nano letters, 9(9), 3252-3257 (2009-08-15)
We report the first observation of stimulated Raman scattering (SRS) from semiconductor nanowires (SNWs). Using continuous wave (CW) excitation (514.5 nm), very strong nonlinear SRS was observed in backscattering from short segments of crystalline GaP NWs with diameter d =
G Chen et al.
Nano letters, 8(5), 1341-1346 (2008-04-22)
We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire.
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