Merck
CN
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文件

684848

Sigma-Aldrich

并五苯

sublimed grade, ≥99.9% trace metals basis

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经验公式（希尔记法）:
C22H14
CAS号:
135-48-8
分子量:
278.35
Beilstein:
1912418
EC 号:
205-193-7
MDL编号:
MFCD00003710
PubChem化学物质编号:
329760927
NACRES:
NA.23

等级

sublimed grade

质量水平

100

检测方案

≥99.9% trace metals basis

形式

powder

mp

372-374 °C (subl.)

溶解性

organic solvents: slightly soluble(lit.)

轨道能量

HOMO 5 eV 
LUMO 3 eV 

OPV设备性能

ITO/pentacene/C60/BCP/Al

  • Short-circuit current density (Jsc): 15 mA/cm2
  • Open-circuit voltage (Voc): 0.36 V
  • Fill Factor (FF): 0.5
  • Power Conversion Efficiency (PCE): 2.7 %

半导体性质

P-type (mobility=0.4-3 cm2/V·s) (on/off ratio=1E5-1E8)

SMILES字符串

c1ccc2cc3cc4cc5ccccc5cc4cc3cc2c1

InChI

1S/C22H14/c1-2-6-16-10-20-14-22-12-18-8-4-3-7-17(18)11-21(22)13-19(20)9-15(16)5-1/h1-14H

InChI key

SLIUAWYAILUBJU-UHFFFAOYSA-N

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相关类别

一般描述

根据要求可进行 TGA/DSC 指定批次追溯

储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

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Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of
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Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline
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