695637
二苯并四硫富瓦烯
97%
别名:
DBTTF, [2,2′]双[苯并[1,3]1,3-二硫叶立德烯]
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关于此项目
经验公式（希尔记法）:
C14H8S4
化学文摘社编号:
分子量:
304.47
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
产品名称
二苯并四硫富瓦烯, 97%
InChI
1S/C14H8S4/c1-2-6-10-9(5-1)15-13(16-10)14-17-11-7-3-4-8-12(11)18-14/h1-8H
SMILES string
S1C(\Sc2ccccc12)=C3/Sc4ccccc4S3
InChI key
OVIRUXIWCFZJQC-UHFFFAOYSA-N
assay
97%
form
solid
mp
239-243 °C
Quality Level
Application
DBTTF是一种有机电子材料，可与包括7,7,8,8-四氰基对苯二醌二甲烷（TCNQ）和2,3-二氯-5,6-二氰基苯醌（DDQ）在内的各种半导体晶体形成电荷转移络合物。这些材料可以是单晶和薄膜形式，可用于制造有机场效应晶体管（OFET）和有机发光二极管（OLED）。
General description
二苯并四硫富瓦烯（DBTTF）是一种有机半导体，具有完全共轭的对称结构。它形成间距为3.948Å的平面分子堆叠。DBTTF具有高电荷迁移率，可以由邻氨基苯甲酸制备并通过真空升华纯化。
signalword
Warning
hcodes
pcodes
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves
Single-crystal organic field-effect transistors based on dibenzo-tetrathiafulvalene
Mas-Torrent M, et al.
Applied Physics Letters, 86(1), 012110-012110 (2005)
Emge, T.J.; Bryden, W.A.; Wiygul, F.M.; Cowan, W.O.; Kistenmacher, T.J.
J. Chem. Phys. , 77, 3188-3188 (1982)
María Elena Sánchez-Vergara et al.
Polymers, 12(1) (2019-12-22)
Chemical degradation is a major disadvantage in the development of organic semiconductors. This work proposes the manufacture and characterization of organic semiconductor membranes in order to prevent semiconductor properties decreasing. Semiconductor membranes consisting of Nylon-11 and particles of π-conjugated molecular
María Elena Sánchez-Vergara et al.
Molecules (Basel, Switzerland), 20(12), 21037-21049 (2015-11-28)
Sandwich structures were fabricated by a vacuum deposition method using MPc (M = Cu, Zn), with a Tetrathiafulvalene (TTF) derivative, and Indium Tin Oxide (ITO) and aluminum electrodes. The structure and morphology of the deposited films were studied by IR
Control of film morphology and its effects on subthreshold characteristics in dibenzotetrathiafulvalene organic thin-film transistors
Yamada T, et al.
Applied Physics Letters, 92(23), 210-210 (2008)
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