双(甲基-η5_-环戊二烯)甲氧基甲基锆

Atomic number of base material: 40 Zirconium

Advanced precursor for atomic layer deposition of ZrO₂ thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO₂ and ZrO₂ films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.