form
liquid
reaction suitability
core: zirconium
color
colorless
bp
110 °C/0.5 mmHg (lit.)
density
1.27 g/mL±0.01 g/mL at 25 °C (lit.)
SMILES string
C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC
InChI
1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1
InChI key
LFGIFPGCOXPKMG-UHFFFAOYSA-N
General description
Atomic number of base material: 40 Zirconium
Application
Advanced precursor for atomic layer deposition of ZrO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.
Features and Benefits
Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
Packaging
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.
signalword
Warning
hcodes
pcodes
Hazard Classifications
Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2
存储类别
10 - Combustible liquids not in Storage Class 3
wgk
WGK 3
flash_point_f
226.4 °F
flash_point_c
108 °C
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全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 725471-10G | 04061833600436 |