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Merck
CN

730726

三乙基化镓

packaged for use in deposition systems

别名:

Et3Ga, TEGa, triethyl gallium, TEG

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关于此项目

线性分子式:
(CH3CH2)3Ga
化学文摘社编号:
分子量:
156.91
UNSPSC Code:
12352103
NACRES:
NA.23
EC Number:
214-232-7
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form

liquid

reaction suitability

core: gallium

bp

109 °C/300 mmHg (lit.)

mp

-82 °C (lit.)

density

1.067 g/mL at 25 °C

InChI

1S/3C2H5.Ga/c3*1-2;/h3*1H2,2H3;

InChI key

RGGPNXQUMRMPRA-UHFFFAOYSA-N

General description

Atomic number of base material: 31 Gallium


pictograms

FlameCorrosion

signalword

Danger

存储类别

4.2 - Pyrophoric and self-heating hazardous materials

wgk

WGK 3

flash_point_f

No data available

flash_point_c

No data available

Hazard Classifications

Eye Dam. 1 - Pyr. Liq. 1 - Skin Corr. 1B - Water-react. 1

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Nanomaterials are considered a route to the innovations required for large-scale implementation of renewable energy technologies in society to make our life sustainable.

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

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Vossen, J. L.; Kern, W.
Thin Film Processes II, 1991, 866-866 null
Nikolay Kornienko et al.
ACS nano, 9(4), 3951-3960 (2015-04-04)
The tunable physical and electronic structure of III-V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conversion. However, their fabrication typically requires complex gas phase instrumentation or growth from high-temperature
M. Yamaguchi
Sci. Synth., 7, 387-387 (2004)



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货号GTIN
730726-10G04061833687390