产品名称
C8-BTBT, ≥99% (HPLC)
SMILES string
CCCCCCCCC1=CC2=C(C=C1)C3=C(C(C=CC(CCCCCCCC)=C4)=C4S3)S2
InChI
1S/C30H40S2/c1-3-5-7-9-11-13-15-23-17-19-25-27(21-23)31-30-26-20-18-24(22-28(26)32-29(25)30)16-14-12-10-8-6-4-2/h17-22H,3-16H2,1-2H3
InChI key
YWIGIVGUASXDPK-UHFFFAOYSA-N
assay
≥99% (HPLC)
form
powder
mp
108-112 °C
semiconductor properties
P-type (mobility=5.5 cm2/V·s)
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Application
C8-BTBT是一种复合聚合物，可用于多种基于有机电子的应用，包括有机光伏电池 (OPV)、有机发光二极管 (OLED)和有机薄膜晶体管(OTFT)。
高场效应迁移率5.5-5.7 cm2/Vs 和109 的高开/关比例；溶液处理(溶解度为80 mg/mL) OFETs
General description
C8-BTBT是一种导电聚合物，以[1]苯并噻吩并[3,2-b][1]-苯并噻吩(BTBT)为基础材料，用于开发空气稳定的半导体。它可以形成旋涂薄膜，从而用作电荷迁移率43 cm2V-1s-1的p型半导体。它在石墨烯和六方氮化硼(hBN) 上形成高度有序的自组装单分子层(SAM)膜，薄层电阻：<1,000 ohm/sq
Legal Information
Nippon Kayaku出品
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Darmawan; Peter;
Advances in Functional Materials, 22(21), 4577-4583 (2012)
Jeong-Wan Jo et al.
Materials (Basel, Switzerland), 13(23) (2020-12-11)
The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3)
Lu Lyu et al.
Physical chemistry chemical physics : PCCP, 19(2), 1669-1676 (2016-12-21)
Combining ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), atomic force microscopy (AFM) and small angle X-ray diffraction (SAXD) measurements, we perform a systematic investigation on the correlations of the electronic structure, film growth and molecular orientation of 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT)
Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS2/Graphene Mixed-Dimensional Heterostructures.
Liu X, et al.
Chemistry of Materials, 23(4), 523-526 (2019)
Zhimin Chai et al.
Nanotechnology, 30(48), 485203-485203 (2019-08-31)
Achieving low-cost fabrication of organic field-effect transistors (OFETs) has long been pursued in the semiconductor industry. Solution-based process allows the fabrication of OFETs cost-effective because of its merit of vacuum-free and room temperature operation. Here, we show a facile and
商品
Small molecular weight organic semiconductors are promising for flexible transistor applications in next-gen soft electronics.
Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.
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