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Merck
CN

753947

ICMA

97% (HPLC)

别名:

1′,4′-Dihydro-naphtho[2′,3′:1,2][5,6]fullerene-C60, C60 derivative, indene-C60 monoadduct

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关于此项目

经验公式（希尔记法）:
C69H8
化学文摘社编号:
186682-36-0
分子量:
836.80
MDL number:
MFCD00093802
NACRES:
NA.23
UNSPSC Code:
12352103

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产品名称

ICMA, 97% (HPLC)

assay

97% (HPLC)

form

solid

loss

0.5 wt. %, 390 °C

mp

320-340 °C

orbital energy

LUMO 3.84 eV (CV)

OPV device performance

ITO/PEDOT:PSS/P3HT: ICMA (1:1)/Al

  • Short-circuit current density (Jsc): 10.56 mA/cm2
  • Open-circuit voltage (Voc): 0.69 V
  • Fill Factor (FF): 0.54
  • Power Conversion Efficiency (PCE): 3.92 %

ITO/PEDOT:PSS/P3HT:ICMA(1:1)/LiF/Al
  • Short-circuit current density (Jsc): 9.66 mA/cm2
  • Open-circuit voltage (Voc): 0.65 eV
  • Fill Factor (FF): 0.59
  • Power Conversion Efficiency (PCE): 3.65 %

Quality Level

100

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相关类别

General description

Dipole moment of indene-C60 monoadduct (ICMA) was estimated to be 2.34 debye. Film formation of ICMA under optimum conditions was studied.1 As a potential candidate for field effect transistors (FETs), ICMA exhibits unipolar n-channel characteristics and high electron mobility.

存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKBJ8081
MKBJ8080

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Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups.
Yu H, et al.
ACS Applied Materials & Interfaces, 5(11), 4865-4871 (2013)
Hyunbum Kang et al.
ACS applied materials & interfaces, 4(1), 110-116 (2011-12-14)
The ability to tune the lowest unoccupied molecular orbital (LUMO)/highest occupied molecular orbital (HOMO) levels of fullerene derivatives used as electron acceptors is crucial in controlling the optical/electrochemical properties of these materials and the open circuit voltage (V(oc)) of solar
Beyond PCBM: Understanding the Photovoltaic Performance of Blends of Indene-C60 Multiadducts with Poly(3-hexylthiophene)
Nardes, A. M.; et al.
Advances in Functional Materials, 22, 4115-4127 (2012)

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