756393
氮化铝
powder, -200 mesh, 99.8% trace metals basis
别名:
Aluminum mononitride
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关于此项目
线性分子式:
AlN
化学文摘社编号:
分子量:
40.99
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
方案
99.8% trace metals basis
表单
powder
粒径
-200 mesh
mp
>2200 °C (lit.)
密度
3.26 g/mL at 25 °C (lit.)
SMILES字符串
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
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应用
Aluminum nitride is a refractory ceramic that is used as an electrically insulating material in applications similar to aluminum oxide. AlN is also used in optical and semiconductor devices with GaN to produce LEDs on sapphire and in piezoelectric MEMS devices.
警示用语:
Danger
危险声明
危险分类
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
靶器官
Lungs
储存分类代码
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
Fang, X.; et al.
Journal of Materials Chemistry, 18, 509-509 (2008)
Strite, S.; Morkoc, H.
J. Vac. Sci. Technol. B, 10, 1237-1237 (1992)
Ambacher, O.
Journal of Physics D: Applied Physics, 31, 2653-2653 (1998)
Chang-wen Zhang et al.
Journal of computational chemistry, 32(14), 3122-3128 (2011-08-05)
Based on first-principles calculations, the geometric, electronic, and magnetic properties as well as the relative stability of the fully hydrogenated and semihydrogenated AlN nanosheets (NSs) have been investigated. The results show that different with the bare graphite-like AlN NSs terminating
Ruyen Ro et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 46-51 (2009-12-31)
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al
商品
Three approaches generate white light, including LED-based down-conversion for broader applications.
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