767522
钨
sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.95% trace metals basis
别名:
宽度
方案
99.95% trace metals basis
表单
pieces
反应适用性
core: tungsten
电阻率
4.9 μΩ-cm, 20°C
直径× 厚度
2.00 in. × 0.25 in.
沸点
5660 °C (lit.)
mp
3410 °C (lit.)
密度
19.3 g/mL at 25 °C (lit.)
SMILES字符串
[W]
InChI
1S/W
InChI key
WFKWXMTUELFFGS-UHFFFAOYSA-N
应用
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.
储存分类代码
11 - Combustible Solids
WGK
nwg
闪点(°F)
Not applicable
闪点(°C)
Not applicable
法规信息
新产品
此项目有
Richard R Schrock et al.
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P Thongkumkoon et al.
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