767522
钨
sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.95% trace metals basis
别名:
宽度
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关于此项目
经验公式（希尔记法）:
W
化学文摘社编号:
分子量:
183.84
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
231-143-9
MDL number:
assay
99.95% trace metals basis
form
pieces
reaction suitability
core: tungsten
resistivity
4.9 μΩ-cm, 20°C
diam. × thickness
2.00 in. × 0.25 in.
bp
5660 °C (lit.)
mp
3410 °C (lit.)
density
19.3 g/mL at 25 °C (lit.)
SMILES string
[W]
InChI
1S/W
InChI key
WFKWXMTUELFFGS-UHFFFAOYSA-N
Application
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.
存储类别
11 - Combustible Solids
wgk
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable