蒸汽压
11.66 psi ( 20 °C)
质量水平
方案
≥99.0% (GC)
表单
liquid
自燃温度
842 °F
技术
GC/GC: suitable
折射率
n20/D 1.358 (lit.)
n20/D 1.359
沸点
26-28 °C (lit.)
mp
−99 °C (lit.)
密度
0.648 g/mL at 25 °C (lit.)
储存温度
2-8°C
SMILES字符串
C[Si](C)(C)C
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
InChI key
CZDYPVPMEAXLPK-UHFFFAOYSA-N
正在寻找类似产品? 访问 产品对比指南
应用
四甲基硅烷可用作合成硅掺杂类金刚石碳基(DLC-Si)薄膜和碳化硅(SiC)块状晶体的硅前体。还可用作研究分子间C-H键活化反应的烃类底物。
警示用语：
Danger
危险声明
危险分类
Flam. Liq. 1
储存分类代码
3 - Flammable liquids
WGK
WGK 3
闪点(°F)
-16.6 °F - closed cup
闪点(°C)
-27 °C - closed cup
个人防护装备
Eyeshields, Faceshields, Gloves
法规信息
危险化学品
此项目有
The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
Roy E Hoffman
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系客户支持