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Merck
CN

900817

Sigma-Aldrich

n-溴化丁铵

greener alternative

≥98%

别名:

1-氢溴酸丁胺 (1:1), 1-溴化丁基铵, Greatcell Solar®, 丁基溴化铵

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关于此项目

经验公式(希尔记法):
C4H12BrN
CAS Number:
分子量:
154.05
MDL编号:
UNSPSC代码:
12352101
NACRES:
NA.23
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质量水平

方案

≥98%

表单

powder or crystals

环保替代产品特性

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

环保替代产品分类

SMILES字符串

[Br-].[N+H3]CCCC

InChI

1S/C4H11N.BrH/c1-2-3-4-5;/h2-5H2,1H3;1H

InChI key

SXGBREZGMJVYRL-UHFFFAOYSA-N

一般描述

我们竭诚为您带来绿色替代产品,以确保符合一项或多项绿色化学12项原则要求。该产品为增强型,提高了能源效率。点击此处以获取更多信息。

应用

四丁基溴化铵可用作溶剂或溶剂系统的成分,用于制备太阳能电池或电子设备。它可用作太阳能应用中使用的钙钛矿材料合成的前体或添加剂。
基于有机卤化物的钙钛矿已经成为用于太阳能电池应用的重要材料类别。 我们的钙钛矿前体可用于合成钙钛矿基太阳能电池的带隙、载流子扩散长度和功率转换效率的优化所需的混合阳离子或阴离子钙钛矿。

法律信息

Greatcell Solar Materials Pty Ltd的产品。
Greatcell Solar是Greatcell Solar Materials Pty Ltd的注册商标。
Greatcell Solar is a registered trademark of Greatcell Solar

储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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访问文档库

Fang Yao et al.
Nature communications, 11(1), 1194-1194 (2020-03-07)
Large single crystals serve as an ideal platform for investigating intrinsic material properties and optoelectronic applications. Here we develop a method, namely, room-temperature liquid diffused separation induced crystallization that uses silicone oil to separate the solvent from the perovskite precursors
Recent advances in hybrid halide perovskites-based solar cells.
Kalyanasundaram K, et al.
Material Matters , 11, 3-3 (2016)
Entropic stabilization of mixed A-cation ABX3 metal halide perovskites for high performance perovskite solar cells.
Yi C, et al.
Energy & Environmental Science, 9, 656-662 (2016)
Photovoltaic mixed-cation lead mixed-halide perovskites: links between crystallinity, photo-stability and electronic properties.
Rehman W, et al.
Energy & Environmental Science, 10, 361-369 (2017)
Zhiping Wang et al.
Advanced materials (Deerfield Beach, Fla.), 29(5), 1604186-1604186 (2016-12-03)
Air-stable doping of the n-type fullerene layer in an n-i-p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH

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