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Merck
CN

912816

Sigma-Aldrich

di-n-butylammonium methylammonium lead(II) heptaiodide

greener alternative

n = 2

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别名:
(BA)2(MA)Pb2I7, 2D perovskite, Bis(butylammonium) methylammonium heptaiododiplumbate
线性分子式:
(BuNH3)2(CH3NH3)Pb2I7
UNSPSC代码:
12352101
NACRES:
NA.23

质量水平

形式

solid

环保替代产品特性

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

环保替代产品分类

一般描述

We are committed to bringing you Greener Alternative Products, which adhere to one or more of The 12 Principles of Greener Chemistry. This product has been enhanced for "Energy efficiency".

应用

2D perovskites have been used as the active material in may applications such as light emmiting diodes, phototransistors, and solar cells. Unlike 3D perovskites, these layered materials give higher moisture stability and longer device lifetimes.
Di-n-butylammonium methylammonium lead(II) heptaiodide can be used for fabrication of perovskite materials for solar cells, light-emitting diodes (LEDs), photodetectors, and lasers.

警示用语:

Danger

危险分类

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Repr. 1A - STOT RE 2

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

法规信息

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Mingjian Yuan et al.
Nature nanotechnology, 11(10), 872-877 (2016-06-28)
Organometal halide perovskites exhibit large bulk crystal domain sizes, rare traps, excellent mobilities and carriers that are free at room temperature-properties that support their excellent performance in charge-separating devices. In devices that rely on the forward injection of electrons and
Yuchuan Shao et al.
Nano letters, 17(12), 7330-7338 (2017-11-08)
Recently, two-dimensional (2D) organic-inorganic perovskites emerged as an alternative material for their three-dimensional (3D) counterparts in photovoltaic applications with improved moisture resistance. Here, we report a stable, high-gain phototransistor consisting of a monolayer graphene on hexagonal boron nitride (hBN) covered
Duyen H Cao et al.
Journal of the American Chemical Society, 137(24), 7843-7850 (2015-05-29)
We report on the fabrication and properties of the semiconducting 2D (CH3(CH2)3NH3)2(CH3NH3)(n-1)Pb(n)I(3n+1) (n = 1, 2, 3, and 4) perovskite thin films. The band gaps of the series decrease with increasing n values, from 2.24 eV (CH3(CH2)3NH3)2PbI4 (n = 1)

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