Bis(t-butylamino)silane, BTBAS

Bis(t-butylamino)silane (BTBAS) is a high-purity silicon precursor widely used in advanced semiconductor and materials applications for chemical vapor deposition (CVD) processes.BTBAS is favored for its ability to deposit uniform, high-quality films at relatively lower temperatures (around 500–750 °C) compared to some other silicon precursors, reducing contamination from carbon and chlorine.It enables controlled hydrolysis and polymerization during deposition, important for high-quality barrier or dielectric layer formation.

Bis(t-butylamino)silane (BTBAS) is primarily used in low-pressure chemical vapor deposition (LPCVD) to deposit silicon nitride (Si₃N₄) films as sidewall spacers in MOS transistors and other semiconductor devices. This process operates at relatively low temperatures (~600 °C), allowing integration with sensitive device layers while minimizing thermal budgets. The high purity and volatility of BTBAS deliver uniform films with excellent step coverage and low particle contamination, which improves throughput and yield in semiconductor fabs. For example: Bis(tert-butylamino)silane (BTBAS) enables the controlled growth of uniform, ultra-thin silicon-containing films, which are critical in microelectronics and nanoscale device fabrication. silicon nitride (SiNx) films can be deposited by ALD using BTBAS in combination with N_₂ plasma. These films play a key role in: Gate spacer layers in advanced transistors, ensuring device reliability and performance. In addition, Bis(t-butylamino)silane (BTBAS) is used as a moisture permeation barrier layers for organic and optoelectronic devices such as OLEDs, photovoltaic cells, and field-effect transistors (FETs), where they significantly enhance stability and lifetime. It is also employed in the growth of high-quality SiO₂ films through low-temperature plasma-enhanced atomic layer deposition (PEALD), using an oxidant that is compatible with moisture- and oxygen-sensitive materials. In one process, SiO₂ films were successfully deposited at 90 °C using CO₂ and Bis(tert-butylamino)silane (BTBAS) as the precursor. In addition to silicon nitride, BTBAS is also utilized for depositing silicon oxide films vital for dielectric layers and advanced packaging in logic, memory (DRAM, NAND, 3D NAND), sensors (MEMS, optoelectronics), and other high-tech electronics manufacturing. Its chemical properties enable controlled film growth with low carbon and chlorine residues, enhancing device reliability. Our Bis(t-butylamino)silane (BTBAS), ≥99.99% trace metals basis (99.99%-Si), is a high-purity silicon precursor specifically formulated for advanced semiconductor manufacturing applications. Its high purity ensures minimal contamination, which is critical for achieving defect-free thin films in microelectronics.

Our BTBAS provides: High purity (≥99.99% Si) for critical semiconductor-grade applications. Consistent and efficient delivery in CVD/LPCVD systems. Capability for deposition of silicon nitride and silicon oxide thin films at reduced temperatures. Reduction of particle contamination and improved equipment uptime with optimized processes.

No metal contact and handle under the glove box