三仲丁氧基铝

Aluminum-tri-sec-butoxide, a non-pyrophoric sol-gel precursor, appears as a colorless liquid. Highly moisture-sensitive, it readily hydrolyzes to aluminum oxide derivatives. Our ≥99.9% trace metals basis grade ensures ultra-low impurities for precise deposition, which is suitable for the synthesis of Al₂O₃ via atomic layer deposition (ALD) and Chemical vapor deposition (CVD) along with sol-gel precursors.

Aluminum-tri-sec-butoxide or ATSB can be used

- As a suitable Al precursor for the synthesis of Al₂O₃ thin films via atomic layer desposition(ALD) and Chemical vapor deposition (CVD).

- As a precursor for the fabrication of Amorphous alumina–titania (Al₂O₃–TiO₂) films on silicon substrates using low-pressure CVD along with titanium tetrachloride (TiCl₄) with varying CO₂ and H₂ gas flows (ATSB/TiCl₄/CO₂/H₂ system). Our Aluminum-tri-sec-butoxide (ATSB) with a purity of ≥99.9% trace metals basis is a highly valuable precursor for advanced thin film applications due to its exceptional purity and consistent performance. Its low impurity levels ensure minimal contamination, which is critical for producing uniform and high-quality Al₂O₃ films via atomic layer deposition (ALD) and chemical vapor deposition (CVD). This high purity contributes to enhanced film properties like improved dielectric strength, chemical stability, and uniform thickness, key factors for semiconductor and microelectronics industries.

已用于制备高表面积氧化铝，其中以 2,4-戊二酮（Aldrich 产品 P775-4）作为螯合剂。