GF35321217
锌
foil, 25mm disks, thickness 0.15mm, as rolled, 99.95+%
别名:
锌
蒸汽压
1 mmHg ( 487 °C)
方案
99.95%
表单
foil
制造商/商品名称
Goodfellow 353-212-17
电阻率
5.8 μΩ-cm, 20°C
直径× 厚度
25 mm × 0.15 mm
沸点
907 °C (lit.)
mp
420 °C (lit.)
密度
7.133 g/mL at 25 °C (lit.)
SMILES字符串
[Zn]
InChI
1S/Zn
InChI key
HCHKCACWOHOZIP-UHFFFAOYSA-N
一般描述
For updated SDS information please visit www.goodfellow.com.
法律信息
Product of Goodfellow
法规信息
新产品
Conghua Lu et al.
Chemical communications (Cambridge, England), (33)(33), 3551-3553 (2006-08-22)
Large-scale, ultralong ZnO nanowire and nanobelt arrays with honeycomb-like micropatterns have been fabricated by hydrothermal oxidation of zinc foil in aqueous alkaline (NH4)2S2O8 solutions.
Lance Brockway et al.
Physical chemistry chemical physics : PCCP, 15(17), 6260-6267 (2013-03-23)
A simple method for the large-scale synthesis of gram quantities of compound semiconductor nanowires without the need for any external catalysts or templates is presented. This method is demonstrated using zinc phosphide (Zn3P2) and zinc antimonide (β-Zn4Sb3) nanowires as example
Zhonghao Li et al.
Chemical communications (Cambridge, England), (41)(41), 6273-6275 (2009-10-15)
Aligned ZnO arrays with branched rods, hexagonal rods, quasi-round rods, hexagonal pyramids and porous nanostructures are constructed on zinc foil in the ionic liquid tetrabutylammonium hydroxide aqueous solution.
Chuanhui Xia et al.
Journal of nanoscience and nanotechnology, 11(12), 10506-10510 (2012-03-14)
We have investigated the properties of Mn-doped ZnO nanocrystalline film growing on zinc foil by the hydrothermal method. X-ray photoelectron spectroscopy shows that the manganese ions exist as Mn2+ in the film. From UV-vis spectra, we observe a red shift
Tandra Ghoshal et al.
Nanotechnology, 19(6), 065606-065606 (2008-02-13)
ZnO nanowire arrays were synthesized on zinc foil by a simple thermal evaporation process at relatively low temperature. Morphology and size controlled synthesis of the ZnO nanostructures was achieved by variation of the synthesis temperature, reaction time and the surface
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