P5654
2,3,4,5,6-五氟硫酚
97% (GC), powder, cyclooxygenase inhibitor
别名:
PFBT, Pentafluorobenzenethiol, Pentafluorophenyl mercaptan
Product Name
2,3,4,5,6-五氟硫酚, 97%
质量水平
方案
97%
折射率
n20/D 1.4645 (lit.)
沸点
143 °C (lit.)
mp
−24 °C (lit.)
密度
1.501 g/mL at 25 °C (lit.)
SMILES字符串
Fc1c(F)c(F)c(S)c(F)c1F
InChI
1S/C6HF5S/c7-1-2(8)4(10)6(12)5(11)3(1)9/h12H
InChI key
UVAMFBJPMUMURT-UHFFFAOYSA-N
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相关类别
警示用语:
Danger
危险声明
危险分类
Flam. Liq. 3 - Skin Corr. 1B
储存分类代码
3 - Flammable liquids
WGK
WGK 3
闪点(°F)
123.8 °F - closed cup
闪点(°C)
51 °C - closed cup
Rei Shiwaku et al.
Scientific reports, 8(1), 6368-6368 (2018-04-25)
Wearable sensor device technologies, which enable continuous monitoring of biological information from the human body, are promising in the fields of sports, healthcare, and medical applications. Further thinness, light weight, flexibility and low-cost are significant requirements for making the devices
James W Borchert et al.
Nature communications, 10(1), 1119-1119 (2019-03-10)
The contact resistance in organic thin-film transistors (TFTs) is the limiting factor in the development of high-frequency organic TFTs. In devices fabricated in the inverted (bottom-gate) device architecture, staggered (top-contact) organic TFTs have usually shown or are predicted to show
Qiaoming Zhang et al.
Scientific reports, 6, 39623-39623 (2016-12-23)
Since the first demonstration, the electrolyte-gated organic field-effect transistors (EGOFETs) have immediately gained much attention for the development of cutting-edge technology and they are expected to have a strong impact in the field of (bio-)sensors. However EGOFETs directly expose their
Inés Temiño et al.
Nature communications, 11(1), 2136-2136 (2020-05-03)
Organic semiconductor materials exhibit a great potential for the realization of large-area solution-processed devices able to directly detect high-energy radiation. However, only few works investigated on the mechanism of ionizing radiation detection in this class of materials, so far. In
Panagiotis Mougkogiannis et al.
Sensors (Basel, Switzerland), 21(1) (2020-12-31)
Low power gas sensors with high sensitivity and selectivity are desired for many practical applications. Devices based on organic field effect transistors are promising because they can be fabricated at modest cost and are low power devices. Organic field effect
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Polytriarylamine Semiconductors
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