description
die layer thickness 300 nm SiO2, die layer thickness 36 nm boron nitride
manufacturer/tradename
SIBN4W
diam.
4 in. , wafer
die thickness
525 μm , silicon
die layer thickness 300 nm SiO2, die layer thickness 36 nm boron nitride
SIBN4W
4 in. , wafer
525 μm , silicon