Merck
CN

214906

Sigma-Aldrich

次磷酸 溶液

50 wt. % in H2O

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别名:
卑磷酸
线性分子式:
H3PO2
CAS号:
分子量:
66.00
MDL编号:
PubChem化学物质编号:
NACRES:
NA.21

蒸汽压

<17 mmHg ( 20 °C)

质量水平

形式

liquid

浓度

48-52% in NaOH (titration)
50 wt. % in H2O

pH值(酸碱度)

1 (20 °C, 500 g/L)

密度

1.206 g/mL at 25 °C

SMILES字符串

O[PH2]=O

InChI

1S/H3O2P/c1-3-2/h3H2,(H,1,2)

InChI key

ACVYVLVWPXVTIT-UHFFFAOYSA-N

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相关类别

一般描述

H3PO2,一种一元含氧酸,也称为次膦酸。H3PO2 作为还原剂参与芳族和脂族二硒醚转化成相应的硒醇。
它在Ce(IV)和强酸存在下进行氧化,得到铈(IV)次磷酸盐络合离子。

象形图

Corrosion

警示用语:

Danger

危险声明

危险分类

Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B

储存分类代码

8B - Non-combustible, corrosive hazardous materials

WGK

WGK 1

闪点(°F)

Not applicable

闪点(°C)

Not applicable


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Hypophosphorous Acid, a Novel Reagent for the Reduction of Diselenides and the Selenol-Catalyzed Reduction of Disulfides1,2.
Gunther WHH.
The Journal of Organic Chemistry, 31(4), 1202-1205 (1966)
Kai Wang et al.
ACS nano, 12(5), 4919-4929 (2018-04-24)
The robust material stability of the quasi-two-dimensional (quasi-2D) metal halide perovskites has opened the possibility for their usage instead of three-dimensional (3D) perovskites. Further, devices based on large area single crystal membranes have shown increasing promise for photoelectronic applications. However
Enzheng Shi et al.
ACS nano, 13(2), 1635-1644 (2019-03-01)
Edges of two-dimensional (2D) halide perovskites are found to exhibit unusual properties such as enhanced photoluminescence lifetime and reduced photoluminescence emission energy. Here, we report the formation mechanism and the dynamic nature of edge states on exfoliated 2D halide perovskite
The Kinetics and Mechanism of the Oxidation of Hypophosphorous Acid by Cerium (IV) in Perchloric Acid Solution.
Carroll RL and Thomas LB.
Journal of the American Chemical Society, 88(7), 1376-1381 (1996)
Shibin Deng et al.
Nature communications, 11(1), 664-664 (2020-02-02)
Two-dimensional hybrid organic-inorganic perovskites with strongly bound excitons and tunable structures are desirable for optoelectronic applications. Exciton transport and annihilation are two key processes in determining device efficiencies; however, a thorough understanding of these processes is hindered by that annihilation

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