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Merck
CN

263265

Gallium

99.99% trace metals basis

Synonym(s):

Elemental gallium

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About This Item

Linear Formula:
Ga
CAS Number:
7440-55-3
Molecular Weight:
69.72
NACRES:
NA.23
PubChem Substance ID:
24855960
UNSPSC Code:
12141715
MDL number:
MFCD00134045

Key Documents

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Product Name

Gallium, 99.99% trace metals basis

InChI

1S/Ga

SMILES string

[Ga]

InChI key

GYHNNYVSQQEPJS-UHFFFAOYSA-N

assay

99.99% trace metals basis

form

(metallic liquid or solid (ambient temp dependent))

resistivity

25.795 μΩ-cm, 30°C

bp

2403 °C (lit.)

mp

29.8 °C (lit.)

density

5.904 g/mL at 25 °C (lit.)

storage temp.

2-8°C

Quality Level

200

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Application

Gallium can be used as a precursor to synthesize:
  • Gallium nitride and other Ga-based compounds for optoelectronic applications.
  • Sulfur/gallium hybrid cathode material for lithium-sulfur batteries. The surface of Ga metal promotes the redox reaction of lithium polysulfides due to its electrocatalytic effect.
  • Ga-based liquid alloys for the fabrication offlexible electronic devices.

Features and Benefits

  • Excellent conductor of heat and electricity
  • Wide temperature range in the liquid state
  • Lowvapor pressure at high temperature

General description

Gallium is a rareearth element that is widely used in smart electronic devices and integratedcircuits as it provides the advantages of low energy consumption and highcomputational speeds. Due to its high boiling point and low melting point, itexhibits a wide temperature range in the liquid state. It tends to formsulfate, chloride, and phosphate complexes due to its high charge. Thecompounds of gallium find applications in advanced semiconductors and LEDchips.

pictograms

CorrosionExclamation mark
GHS05,GHS07

signalword

Warning

Hazard Classifications

Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1

Storage Class

8A - Combustible corrosive hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges

Regulatory Information

危险化学品
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Certificates of Analysis (COA)

Lot/Batch Number
MKCZ4081
MKCZ4082
MKCZ3486
MKCX6017
MKCX2908

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Elizabeth M Carnicom et al.
Dalton transactions (Cambridge, England : 2003), 46(41), 14158-14163 (2017-10-07)
Previously unreported σ-phases in the ternary niobium-based systems Nb-X-Ga for X = Ru, Rh, Pd, Ir, Pt, Au, and Nb-X-Al for X = Ir, and Pt are presented, prepared by arc-melting followed by annealing at 1000 °C for 1 week.
Sayan Sarkar et al.
Scientific reports, 9(1), 8180-8180 (2019-06-05)
Recent advances in high performance thermoelectric materials have garnered unprecedented attention owing to their capability of direct transformation of heat energy to useful electricity. Copper Telluride (Cu2Te), a member of the chalcogenide family has emerged as a state-of-the-art thermoelectric material
C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
Michael A Jakupec et al.
Metal ions in biological systems, 42, 425-462 (2004-06-23)
Gallium has been the second metal to show activity against malignant tumors in humans soon after the establishment of platinum drugs in routine clinical practice. It has the unique property of inhibiting tumor growth as a simple cation, mainly because
Prasana Sahoo et al.
Biosensors & bioelectronics, 44, 164-170 (2013-02-22)
We demonstrate a very simple and generic protocol for ultrasensitive in-situ label-free detection of DNA hybridization using third generation poly(amidoamine)dendrimer (G3-PAMAM) functionalized GaN nanowires (NWs). PAMAM modified GaN NWs provides large density of docking site to immobilize significant number of
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