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Merck
CN

263273

Gallium

99.999% trace metals basis

Synonym(s):

Elemental gallium

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About This Item

Linear Formula:
Ga
CAS Number:
Molecular Weight:
69.72
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141715
MDL number:
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assay

99.999% trace metals basis

form

(chips, chunks), (metallic liquid or solid (ambient temp dependent))

reaction suitability

core: gallium

resistivity

25.795 μΩ-cm, 30°C

bp

2403 °C (lit.)

mp

29.8 °C (lit.)

density

5.904 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

[Ga]

InChI

1S/Ga

InChI key

GYHNNYVSQQEPJS-UHFFFAOYSA-N

Application

The wide liquid range of gallium was exploited recently when it was used as a solvent for the successful synthesis of ternary silicides, SmNiSi3 and YNiSi3, without incorporating Ga in their structure -- a promising new synthetic method.
Gallium (Ga) is a silver-colored metal that exists as a metallic liquid or solid, depending on the ambient temperature, with a melting point of 29.8 °C and a boiling point of 2,403 °C. This unique property allows gallium to be used in various applications, particularly in electronics and optoelectronics. Our high-purity gallium is characterized by its purity of 99.999% on a trace metals basis, it is utilized in the production of semiconductors, LED technology, and solar panels. Additionally, its exceptional thermal and electrical conductivity makes it particularly valuable in electronics and advanced technology applications.


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pictograms

CorrosionExclamation mark

signalword

Warning

Hazard Classifications

Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges

Storage Class

11 - Combustible Solids

Regulatory Information

危险化学品

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Articles

Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.

Solid state and materials chemistry have made a tremendous impact and have experienced growth in recent years, particularly for rare earthcontaining materials.


C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
Michael A Jakupec et al.
Metal ions in biological systems, 42, 425-462 (2004-06-23)
Gallium has been the second metal to show activity against malignant tumors in humans soon after the establishment of platinum drugs in routine clinical practice. It has the unique property of inhibiting tumor growth as a simple cation, mainly because
Prasana Sahoo et al.
Biosensors & bioelectronics, 44, 164-170 (2013-02-22)
We demonstrate a very simple and generic protocol for ultrasensitive in-situ label-free detection of DNA hybridization using third generation poly(amidoamine)dendrimer (G3-PAMAM) functionalized GaN nanowires (NWs). PAMAM modified GaN NWs provides large density of docking site to immobilize significant number of



Global Trade Item Number

SKUGTIN
263273-50G04061833605820
263273-10G04061826122235