277959
Indium
powder, 99.99% trace metals basis
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About This Item
Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141719
EC Number:
231-180-0
MDL number:
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.99% trace metals basis
form
powder
composition
In
reaction suitability
core: indium
resistivity
8.37 μΩ-cm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
General description
Indium is a silvery-white soft metal with aface-centered tetragonal crystalline structure. It becomes superconductingat 3.37 K. It improves alloys′ hardness, corrosion resistance, andstrength.
Application
Indium can be used as a:
- Dopant to tune the electrical and photoelectrical properties of CdSe nanowires.
- Negative electrode material for Mg-ion batteries.
- Reducing agent in many organic transformations because of its low first ionization potential.
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Danger
Storage Class
4.1B - Flammable solid hazardous materials
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type P3 (EN 143) respirator cartridges
hcodes
Hazard Classifications
Flam. Sol. 1 - STOT RE 1 Inhalation
target_organs
Lungs
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Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
Zhubing He et al.
Small (Weinheim an der Bergstrasse, Germany), 5(3), 345-350 (2008-12-06)
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 277959-50G | 04061826202227 |
| 277959-10G | 04061826202210 |