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Merck
CN

277959

Indium

powder, 99.99% trace metals basis

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About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
7440-74-6
Molecular Weight:
114.82
NACRES:
NA.23
PubChem Substance ID:
24856497
UNSPSC Code:
12141719
EC Number:
231-180-0
MDL number:
MFCD00134048

Key Documents

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Product Name

Indium, powder, 99.99% trace metals basis

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

InChI

1S/In

SMILES string

[In]

vapor pressure

<0.01 mmHg ( 25 °C)

assay

99.99% trace metals basis

form

powder

resistivity

8.37 μΩ-cm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

Quality Level

100

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Application

Indium can be used as a:

  • Dopant to tune the electrical and photoelectrical properties of CdSe nanowires.
  • Negative electrode material for Mg-ion batteries.
  • Reducing agent in many organic transformations because of its low first ionization potential.

General description

Indium is a silvery-white soft metal with aface-centered tetragonal crystalline structure. It becomes superconductingat 3.37 K. It improves alloys′ hardness, corrosion resistance, andstrength.

pictograms

FlameExclamation mark
GHS02,GHS07

signalword

Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

4.1B - Flammable solid hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

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Certificates of Analysis (COA)

Lot/Batch Number
SDBB5367
SDBB0407
STBL2381
STBK7631
STBK5371

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Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
Zhubing He et al.
Small (Weinheim an der Bergstrasse, Germany), 5(3), 345-350 (2008-12-06)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
R C Longo et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01)
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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