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326127

Indium(III) nitrate hydrate

99.99% trace metals basis

Synonym(s):

Indium trinitrate hydrate, Indium(3+) trinitrate hydrate

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About This Item

Linear Formula:
In(NO3)3 · xH2O
CAS Number:
207398-97-8
Molecular Weight:
300.83 (anhydrous basis)
NACRES:
NA.23
PubChem Substance ID:
24859563
UNSPSC Code:
12352302
EC Number:
237-393-5
MDL number:
MFCD00149742
Assay:
99.99% trace metals basis
Form:
powder and chunks
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assay

99.99% trace metals basis

form

powder and chunks

reaction suitability

core: indium, reagent type: catalyst

impurities

≤150.0 ppm Trace Metal Analysis

SMILES string

[In+3].[H]O[H].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O

InChI

1S/In.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1;

InChI key

YZZFBYAKINKKFM-UHFFFAOYSA-N

General description

Indium(III) nitrate hydrate is an indium based precursor solution, which can be annealed at 500°C and spin coated to form indium oxide thin films.

Application

Indium(III) nitrate hydrate is used in the preparation of indium based substrates for the fabrication of semiconductor devices, such as thin film transistors.

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pictograms

Flame over circleExclamation mark
GHS03,GHS07

signalword

Danger

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Ox. Sol. 2

Storage Class

5.1B - Oxidizing hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

Regulatory Information

危险化学品

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Certificates of Analysis (COA)

Lot/Batch Number
0000509010
0000509010
0000342716
0000342716
0000254280

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Articles

Methods of Synthesizing Monodisperse Colloidal Quantum Dots

Colloidal quantum dots (CQDs) are semiconducting crystals of only a few nanometers (ca. 2–12 nm) coated with ligand/surfactant molecules to help prevent agglomeration.

Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles
Bagheri-Mohagheghi M-M, et al.
Physica E: Low-Dimensional Systems and Nanostructures, 41(10), 1757-1762 (2009)
High electrical performance of wet-processed indium zinc oxide thin-film transistors
Park K, et al.
IEEE Electron Device Letters, 31(4), 311-313 (2010)
Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method
Lau LN, et al.
Applied Surface Science, 345, 355-359 (2015)
View All Related Papers

Global Trade Item Number

SKUGTIN
326127-10G04061826716014
326127-50G04061826716021